2SC4081UB transistors 1/3 general purpose small signal amplifier (50v, 0.15a) 2SC4081UB z applications general purpose small signal amplifier z features 1) low cob. cob=2.0pf (typ.) 2) complements the 2sa4081. z structure npn silicon epitaxial planar transistor z dimensions (unit : mm) umt3f each lead has same dimensions 2.0 0.32 0.65 0.65 1.3 2.1 1.25 0.425 0.425 (1) (2) (3) 0.9 0.53 0.53 0.13 (1) base (2) emitter (3) collector abbreviated symbol : b z absolute maximum (ta=25 c) parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current power dissipation junction temperature range of storage temperature v cbo v ceo v ebo p d i cp tj tstg 60 v v v ma mw ma ? 1 ? 1 pw=1ms single pulse ? 2 each terminal mounted on a recommended land ? 2 c c 50 7 150 i c 200 200 150 ? 55 to + 150 symbol limits unit z electrical characteristics (ta=25 c) parameter collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current gain collector-emitter saturation voltage transition frequency output capacitance symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) f t cob min. 60 50 7 ? ? 82 ? ? ? ? ? ? ? ? ? ? 180 2.0 ? ? ? 100 100 560 400 ? 3.5 vi c = 50 a i c = 1ma i e = 50 a v cb = 60v v eb = 7v v ce = 6v, i c = 1ma i c /i b = 50ma/5ma v ce = 12v, i e =? 2ma, f = 100mhz v cb = 12v, i e = 0a, f = 1mhz v v na na ? mv mhz pf typ. max. unit conditions
2SC4081UB transistors 2/3 h fe rank categories rank pq 82 to 180 120 to 270 h fe r 180 to 390 s 270 to 560 z electrical characterristic curves fig.1 grounded emitter propagation characteristics 0 0.1 0.2 0.5 2 20 50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 5 10 ta = 100 c v ce =6v collector current : i c (ma) base to emitter voltage : v be (v) 25 c ? 55 c fig.2 grounded emitter output characteristics ( ) 0 20 40 60 80 100 0.4 0.8 1.2 1.6 2.0 0 collector current : i c (ma) collector to emitter voltage : v ce (v) 0.05ma 0.10ma 0.15ma 0.25ma 0.30ma 0.35ma 0.20ma ta=25 c i b =0a 0.40ma 0.50ma 0.45ma 0 0 2 8 10 4 8 12 16 4 6 20 i b =0a ta=25 c collector current : i c (ma) collector to emitter voltage : v ce (v) 3 a 6 a 9 a 12 a 15 a 18 a 21 a 24 a 27 a 30 a fig.3 grounded emitter output characteristics ( ? ) 0.2 20 10 0.5 1 2 5 10 20 50 100 200 50 100 200 500 v ce =5v 3v 1v ta=25 c fig.4 dc current gain vs. collector current ( ) dc current gain : h fe collector current : i c (ma) 0.2 0.5 1 2 5 10 20 50 100 200 20 10 50 100 200 500 25 c ? 55 c ta=100 c v ce = 5v fig.5 dc current gain vs. collector current ( ? ) dc current gain : h fe collector current : i c (ma) fig. 6 collector-emitter saturation voltage vs. collector current 0.2 collector saturation voltage : v ce(sat) (v) collector current : i c (ma) 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 i c /i b =50 20 10 ta=25 c fig.7 collector-emitter saturation voltage vs. collector current ( ) 0.2 collector saturation voltage : v ce(sat) (v) collector current : i c (ma) 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 i c /i b =10 ta=100 c 25 c ? 55 c fig.8 collector-emitter saturation voltage vs. collector current ( ? ) collector saturation voltage : v ce(sat) (v) collector current : i c (ma) 0.2 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 i c /i b =50 ta=100 c 25 c ? 55 c fig.9 gain bandwidth product vs. emitter current 50 ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 100 200 500 ta=25 c v ce =6v emitter current : i e (ma) transition frequency : f t (mhz)
2SC4081UB transistors 3/3 fig.10 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage collector to base voltage : v cb (v) emitter to base voltage : v eb (v) collector output capacitance : cob ( pf) emitter input capacitance : cib ( pf) 0.2 0.5 1 2 5 10 20 50 1 2 5 10 20 cob ta=25 c f = 1mhz i e =0a i c =0a cib fig.11 base-collector time constant vs. emitter current ? 0.2 ? 0.5 ? 1 ? 2 ? 5 ? 10 base collector time constant : ccr bb' (ps) emitter current : i e (ma) 10 20 50 100 200 ta=25 c f=32mh z v cb =6v
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